发明名称 POSITIVE RESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a positive resist composition excellent in aptness for halftone exposure, hole pitch dependency and margin for exposure, capable of preventing a sensitivity change due to storage with age, excellent in PED stability and excellent also in uniformity of reduction in film thickness when a resin is etched with an oxide. SOLUTION: The positive resist composition contains a resin having repeating units with a specified alicyclic lactone structure, further having an alicyclic hydrocarbon group and having a velocity of dissolution in an alkali developing solution increased by the action of an acid and at least two specified compounds which generate acids when irradiated with active light or radiation.
申请公布号 JP2002251013(A) 申请公布日期 2002.09.06
申请号 JP20010048880 申请日期 2001.02.23
申请人 FUJI PHOTO FILM CO LTD 发明人 SATO KENICHIRO;KODAMA KUNIHIKO
分类号 G03F7/039;C08F20/28;C08F32/04;C08F32/08;C08K5/36;C08L101/06;G03F7/004;H01L21/027 主分类号 G03F7/039
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