发明名称 METHOD FOR DETERMINING THICKNESS OF FILM TO BE PLANARIZED IN CHEMICAL MECHANICAL POLISHING METHOD
摘要 PROBLEM TO BE SOLVED: To improve the yield and production speed of products by increasing reliability of the thickness of a planarized film and eliminating instability of a manufacturing process. SOLUTION: A method includes a step where a plurality of wafer assemblies in which the thicknesses of films to be planarized in respective assemblies are different are provided, regarding a wafer assembly constituted of a plurality of wafers which have films of substantially equal thickness on the wafers; a step where a chemical mechanical polishing method is performed to each of the wafers of the wafer assemblies and one change relation is obtained, in which an end point detecting signal is changed according to polishing time in a polishing process of the wafers; and a step where a minimum thickness of a film to be planarized is selected in a wafer assembly, in which transition ratio of the change relation is smaller than a set value and made a reference thickness of a film to be planarized in a chemical mechanical polishing method are installed.
申请公布号 JP2002246351(A) 申请公布日期 2002.08.30
申请号 JP20000342994 申请日期 2000.11.10
申请人 PROMOS TECHNOL INC 发明人 SAI SEKIGEN;YO MEIJO;O KUNHO;I KANKUN
分类号 B24B37/013;H01L21/304 主分类号 B24B37/013
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