| 摘要 |
<p>A semiconductor light-emitting device from which light is taken out on its substrate side, in which an electrode layer is formed on a p-type semiconductor layer (e.g., p-type GaN layer) formed on an active layer, and a nickel layer having a thickness equal to or less than the penetration depth of the light produced in the active layer and serving as a contact metal layer for ohmic contact is formed between the electrode layer and the p-type semiconductor layer. The nickel layer is so thin that the reflection efficiency is heightened.</p> |
