发明名称 |
Self-aligned SiGe NPN with improved ESD robustness using wide emitter polysilicon extension |
摘要 |
A semiconductor bipolar transistor structure having improved electrostatic discharge (ESD) robustness is provided as well as a method of fabricating the same. Specifically, the inventive semiconductor structure a semiconductor structure comprises a bipolar transistor comprising a lightly doped intrinsic base; a heavily doped extrinsic base adjacent to said intrinsic base, a heavily doped/lightly doped base doping transition edge therebetween, said heavily doped/lightly doped base doping transition edge defined by an edge of a window; and a silicide region extending on said extrinsic base, wherein said silicide region is completely outside said window.
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申请公布号 |
US6441462(B1) |
申请公布日期 |
2002.08.27 |
申请号 |
US20010682016 |
申请日期 |
2001.07.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LANZEROTTI LOUIS D.;VOLDMAN STEVEN H. |
分类号 |
H01L21/331;H01L29/08;H01L29/737;(IPC1-7):H01L27/082 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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