发明名称 |
Sense line coupling reduction system |
摘要 |
The inductive and capacitive coupling between adjacent sense lines in a semi-conductor memory is minimized by periodically interchanging the locations of the two sense lines assigned to each column of storage cells in a semi-conductor memory.
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申请公布号 |
US3942164(A) |
申请公布日期 |
1976.03.02 |
申请号 |
US19750545737 |
申请日期 |
1975.01.30 |
申请人 |
SEMI, INC. |
发明人 |
DUNN, WILLIAM C. |
分类号 |
G11C5/02;G11C7/02;G11C7/18;G11C11/419;(IPC1-7):G11C11/40;G11C13/00 |
主分类号 |
G11C5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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