| 摘要 |
<p>A process is described for forming a common input-output (I/O) site that is suitable for both wire-bond and solder bump flip chip connections, such as controlled-collapse chip connections (C4). The present invention is particularly suited to semiconductor chips that use copper as the interconnection material, in which the soft dielectrics used in manufacturing such chips are susceptible to damage due to bonding forces. The present invention reduces the risk of damage by providing site having a noble metal (26) on the top surface of the pad, while providing a diffusion barrier (22) to maintain the high conductivity of the metal interconnects. Process steps for forming an I/O site within a substrate (20) are reduced by providing a method for selectively depositing metal layers in a feature (21) formed in the substrate (20). Since the I/O sites of the present invention may be used for either wire-bond or solder bump connections, this provides increased flexibility for chip interconnection options, while also reducing process costs.</p> |
