发明名称 METHOD AND SYSTEM FOR GENERATION AND DISTRIBUTION OF SUPPLY VOLTAGES IN MEMORY SYSTEMS
摘要 Techniques for producing and supplying various voltage levels within a memory system having multiple memory blocks (e.g., memory chips) are described. The various voltage levels can be produced by voltage generation circuitry (e.g., charge pump and/or regulator circuitry) within the memory system. The various voltage levels can be supplied to the multiple memory blocks through a power bus. According to one aspect, charge pump and/or regulator circuits are provided within at most one of the memory blocks of a memory system (unless back-ups are provided for fault tolerance), and a power bus is used to distribute the generated voltage levels to other of the memory blocks. According to another aspect, a memory controller generates multiple supply voltage levels that are distributed (e.g., via a power bus) to each of the memory blocks.
申请公布号 US2002114184(A1) 申请公布日期 2002.08.22
申请号 US20010788120 申请日期 2001.02.16
申请人 SANDISK CORPORATION 发明人 GONGWER GEOFFREY STEVEN;CONLEY KEVIN M.;WANG CHI-MING;WANG YONG LIANG;CERNEA RAUL ADRIAN
分类号 G06F1/26;G06F12/00;G06F13/16;G06K19/07;G11C5/14;G11C16/02;G11C16/06;(IPC1-7):G11C16/04 主分类号 G06F1/26
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