发明名称 Gate oxide protection method
摘要 An output driver prevents gate oxide breakdown and reverse charge leakage from a bus to the internal power supply. When the voltage on the bus exceeds the internal supply voltage or when the driver is powered down, a reference voltage generator provides intermediate voltages to prevent the development of excessive gate-source, gate-drain, and gate-backgate voltages in the driver. An upper protection circuit and a lower protection circuit multiplex the intermediate voltages to ensure driver protection and proper operation. A buffering circuit turns off a buffering transistor to block charge leakage to the internal power supply when the bus voltage is greater than the internal power supply voltage. A logic protection circuit prevents the bus voltage from appearing at the control terminal of the driver.
申请公布号 US6437958(B1) 申请公布日期 2002.08.20
申请号 US20000489540 申请日期 2000.01.21
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 DUNCAN RICHARD L.;WERT JOSEPH D.
分类号 H03K19/003;(IPC1-7):H02H9/00 主分类号 H03K19/003
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