发明名称 |
Gate oxide protection method |
摘要 |
An output driver prevents gate oxide breakdown and reverse charge leakage from a bus to the internal power supply. When the voltage on the bus exceeds the internal supply voltage or when the driver is powered down, a reference voltage generator provides intermediate voltages to prevent the development of excessive gate-source, gate-drain, and gate-backgate voltages in the driver. An upper protection circuit and a lower protection circuit multiplex the intermediate voltages to ensure driver protection and proper operation. A buffering circuit turns off a buffering transistor to block charge leakage to the internal power supply when the bus voltage is greater than the internal power supply voltage. A logic protection circuit prevents the bus voltage from appearing at the control terminal of the driver.
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申请公布号 |
US6437958(B1) |
申请公布日期 |
2002.08.20 |
申请号 |
US20000489540 |
申请日期 |
2000.01.21 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
DUNCAN RICHARD L.;WERT JOSEPH D. |
分类号 |
H03K19/003;(IPC1-7):H02H9/00 |
主分类号 |
H03K19/003 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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