| 摘要 |
<p>PURPOSE:To provide a polarized electron beam generating element capable of providing a high polarization ratio and high quantum efficiency under the condition where the optical thicknesses of a reflecting layer and an optical resonator are difficult to control. CONSTITUTION:A semiconductor multilayer reflecting layer 14 is provided on the reverse side of a semiconductor photoelectric layer 18 through a buffer layer 16. The distance from the surface of the semiconductor photoelectric layer 18 to the semiconductor multilayer film reflecting layer 14 in such a manner that a plurality of resonance wavelengths of an exciting laser beam 20 capable of providing high absorptivity by resonance are present in the wavelength area of the exciting laser beam 20 capable of providing a high polarization ratio.</p> |
