| 摘要 |
PROBLEM TO BE SOLVED: To provide a bipolar transistor integrated circuit where degradation of high frequency property can be restrained to a minimum and ESD resistance can be improved. SOLUTION: A dimension of an emitter contact mask 10 for forming a base is made variable, and a transistor 31 attaching importance to high frequency property and a transistor 32 having an improved ESD resistance coexist in a chip. In other words, more than at least two kinds of transistors different in emitter contact width are provided in the same chip, the transistor 31 having a small emitter contact width is used as an internal element, and the transistor 32 having a large emitter contact width is used as the element which wiring leads directly to external terminals.
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