| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that can be manufactured without generating etching residues and without deteriorating element characteristics and without collapsing and disconnecting wirings and without adhesion and disconnection of wirings when manufacturing the semiconductor device that is a fine structure like an aerial wiring and has a structure with a gap of high-aspect-ratio, and to provide the semiconductor device manufactured by its manufacturing method. SOLUTION: The method for manufacturing the semiconductor device according to the present invention comprises a step of forming the fine structure that consists of a first material 5 and a second material 6, which are different from each other, and a step of removing the first material 5 from the fine structure by using super critical fluid 7.
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