| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for forming a thin film, which can form a thin film superior in adhesiveness to a base material. SOLUTION: The base material 10 is held by a base material holding part 2 in the upper part of a chamber 11, and an evaporation source 20 is arranged in the lower part. A high frequency voltage is applied to the base material holding member 2, and a direct current is applied between the base material holding member 2 and a boat 1 of the evaporation source 20, while making the boat 1 as an anode. Inert gas or reactive gas is fed to the chamber 11 through a flow control device 24. A controlling device 30 controls a feeding amount of the gas so that a vacuum degree in the chamber 11 can be kept constant. In an initial stage of forming the thin film, the gas-feeding amount is much, because the evaporation substance from the evaporation source 20 is little, but the gas-feeding amount decreases, as the evaporation substance from the evaporation source 20 is filled in the chamber 11. |
