| 摘要 |
As soon as a write command is input to a nonvolatile memory cell array, an internal charge pump circuit starts pumping. When the pumping is achieved, the writing to the nonvolatile memory cell array is implemented. By keeping the internal charge pump circuit ready for a next write command even after the end of the first write operation, it is possible to cut down the time required for the activation/deactivation of the internal charge pump circuit, which would cause redundancy. When it is determined that no successive write operations are to be performed, the internal charge pump circuit is deactivated. Similar controls are carried out for the other commands which rewrite the contents of the nonvolatile memory cell array.
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