| 摘要 |
A multilayer film (10) in which a plurality of Si1-x1-y1Gex1Cy1 (0 </= x1 < 1, 0 < y1 < 1) layers having a composition having a smaller proportion of Ge, such as Si0.785Ge0.2C0.015 layer (13), and, a plurality of Si1-x2-y2Gex2Cy2 (0 < x2 1, 0 </= y2 < 1)(x1 < x2, y1 > y2) layers having a composition having a greater proportion of Ge, such as Si0.2Ge0.8 layer (12), are alternately laminated. The multilayer film allows the expansion of the range wherein a semiconductor crystal layer having C atoms in lattice positions is capable of functioning as a SiGeC layer to a composition having a greater proportion of Ge. |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;KANZAWA, YOSHIHIKO;SAITOH, TOHRU;NOZAWA, KATSUYA;KUBO, MINORU;HARA, YOSHIHIRO;TAKAGI, TAKESHI;KAWASHIMA, TAKAHIRO |
发明人 |
KANZAWA, YOSHIHIKO;SAITOH, TOHRU;NOZAWA, KATSUYA;KUBO, MINORU;HARA, YOSHIHIRO;TAKAGI, TAKESHI;KAWASHIMA, TAKAHIRO |
