| 发明名称 |
Manufacturing method of semiconductor device |
| 摘要 |
A manufacturing method of a semiconductor device in which wire connection means is connected to an electrode formed on a surface of an IC and made of Cu or a material mainly containing Cu, comprises an oxide film removal treatment step of applying a Cu oxide film removal treatment to the electrode, and a supersonic bonding step of bonding the wire connection means with supersonic to the electrode after the oxide film removal treatment step.
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| 申请公布号 |
US2002106903(A1) |
申请公布日期 |
2002.08.08 |
| 申请号 |
US20020062663 |
申请日期 |
2002.02.05 |
| 申请人 |
NEC CORPORATION |
发明人 |
KURITA YOICHIRO;INOMATA TERUJI |
| 分类号 |
H01L21/302;H01L21/306;H01L21/48;H01L21/60;H01L21/607;H01L23/485;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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