SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD

摘要

A semiconductor device has a semiconducting substrate covered with a first insulating film having holes through which an interconnecting film can contact the substrate. An encapsulting layer, comprising an oxide of the interconnecting material, has a void overlapping the first penetrating hole. A second insulating film is applied to the encapsulating and overlaps the first and second penetrating holes. A second interconnecting film, selectively applied, links to the first interconnecting layer via the second penetrating hole. The first interconnecting film has a hillock of predetermined height formed at the first penetrating hole.