Nitride semiconductor and a method thereof, a nitride semiconductor device and a method thereof

摘要

In a nitride semiconductor of BpAlqGarInsN (0<=p<=1, 0<=q<=1, 0<=r<=1, 0<=s<=1, p+q+r+s=1), in particular a p-type nitride compound semiconductor, a point defect concentration of the p-type semiconductors is set to 1x1019 cm-3 or more. This makes it possible to obtain a high carrier concentration at room temperature.