SEMICONDUCTOR STRUCTURE AND METHOD FOR PROCESSING THE SAME

摘要

PURPOSE: A semiconductor structure and a method for processing the same are provided to integrate dual work function logic technology with a borderless contact to achieve MLD performance and MDL array efficiency, and result in a cost effective, high performance embedded DRAM structure and process. CONSTITUTION: A semiconductor structure is provided which includes the first material and the second material. The first material has the first contact hole with a horizontal surface of the first material being adjacent to the first contact hole. The second material extends over the first material and the second material comprises the second contact hole, with the second contact hole extending over the first contact hole to expose a portion of the horizontal surface. A conductor is disposed within the first contact hole, and a spacer lines the second contact hole and extends over the conductor. The spacer(160) has a dimension sufficient so that no horizontal surface of the first material is exposed through the second contact hole.