| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which achieves a high degree of integration and which owns high reliability. SOLUTION: In this semiconductor device 8, a first semiconductor element 2, an electrically insulating substrate 4, and a second semiconductor device 3 are arranged in this order from the lower layer on a base body 1 and are mutually fixed. The first semiconductor element 2, the electrically insulating substrate 4, the second semiconductor element 3, and external terminals 5 are electrically connected by wires 6, and they are covered by a covering resin material 7. The longitudinal elastic coefficient of the electrically insulating substrate 4 is chosen to be 10 GPa or larger and 120 GPa or smaller. |
