| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that reduces the difference in plating deposition rate between a central region and a outer region of a wafer to be reduced, and to provide a manufacturing method for the semiconductor device. SOLUTION: A plurality of chip element forming regions and a scribe line region separating the plurality of the chip elements forming regions from one another are formed on a wafer 10. A wiring 1 is formed in the scribe line region, so as to surround each of the chip element forming regions and to extend to close-to-edge regions P of the wafer.
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