| 摘要 |
PROBLEM TO BE SOLVED: To prevent troubles such as an open failure or an increase in connection resistance in an environment of high temperatures and humidity when a flip chip method is applied. SOLUTION: Lands 22 are formed on a wiring board 20, a tin (Sn) plating film 23 is formed on the lands 22, a semiconductor chip 11 where gold bumps 17 have been formed is mounted on the wiring board 20, and the gold bumps 17 are bonded to the tin plating film 23 by thermocompression. By this thermo- compression bonding, the lands 22 and the gold bumps 17 are electrically and mechanically connected together through a gold-tin eutectic layer formed of the tin plating film 23 and the gold bump 17. Therefore, the land and the gold bump are electrically and mechanically together with a gold-tin eutectic layer formed of the tin plating film and the gold bump, so that a trouble such as an open circuit or an increase in connection resistance can be prevented from occurring. |
