| 摘要 |
PURPOSE:To form a capacitor characterized by a very high capacitance and a very few defect density by forming a metal film in connection with the upper part of an N-type conductive region that is formed in a P-type conductive region on a semiconductor substrate, and forming a metal oxide film on the metal film by an anodic oxidation method. CONSTITUTION:On a P-type silicon substrate 1, the following parts are provided: an element isolating insulating film 2; a gate insulating film 3; a first polycrystalline silicon gate layer 4; N-type highly doped diffused layers 5 and 6 which are to become source and drain regions; and an interlayer insulating film 7 comprising a CVD SiO2 film. Thereafter, TiN 8 is formed through a contact hole in contact with the highly doped diffused layer 5. A tantalum film 11 is formed by a chemical vapor growth method. An interlayer insulating film 9 is formed through an opened contact hole. A tantalum oxide film 12 is formed on the tantalum film 11 by an anodic oxidation method. A plate electrode 13 comprising tungsten is formed on the tantalum oxide film 12. Meanwhile, a tungsten silicide film is formed into a bit line 10 on the highly doped diffused layer 6. |
