| 摘要 |
Disclosed is a method for depositing a thin dielectric on a portion in which a decreased growth speed of epitaxy is needed in a bridge fashion, and adjusting the width of bridges made of dielectric material and the distance of the bridges deposited, thereby controlling a growth speed and growth thickness of an epitaxial growth layer, which comprising the processes of growing a bridge-shape thin dielectric on a semiconductor substrate for fabricating a semiconductor integrated circuit device, and growing an epitaxial layer with different epitaxial growth rates on selective areas on top of the semiconductor substrate. Thus, the method controls a distance between bridges and a width of the bridge, thereby adjusting a growth speed and growth thickness of an epitaxial layer to be grown in future. Furthermore, the method allows a change in growth characteristics of the epitaxial layer to be smooth, resulting in a decreased light reflection, and allows the change in growth characteristics to be occurred at an extremely small region, thereby efficiently applying to a high-speed revolution epitaxial growth apparatus.
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