发明名称 Interconnection system with lateral barrier layer
摘要 An interconnection system having a bottom metal layer that has a conduction layer with a sidewall and an overlying barrier layer. A lateral barrier layer is disposed adjacent the sidewall of the conduction layer, and an insulation layer is over the bottom metal layer. The insulation layer forms vias extending through the insulation layer to the bottom metal layer. A top metal layer extends through the vias to electrically contact the bottom metal layer. The overlying barrier layer and the lateral barrier layer are relatively resistant to interaction with the top metal layer as compared to the conduction layer.
申请公布号 US6426286(B1) 申请公布日期 2002.07.30
申请号 US20000574804 申请日期 2000.05.19
申请人 LSI LOGIC CORPORATION 发明人 SCHINELLA RICHARD D.;SUKHAREV VALERIY
分类号 H01L21/768;(IPC1-7):H01L21/28 主分类号 H01L21/768
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