Method of manufacturing ferroelectric memory device

摘要

A method of manufacturing a ferroelectric memory device which has a gate structure constituted by a ferroelectric layer and a conductor layer stacked on a semiconductor substrate. The method includes steps of forming the gate structure section by patterning the ferroelectric layer and the conductor layer through etching using a common mask layer, introducing impurities into the semiconductor substrate in a self-aligning manner with respect to the gate structure section, and annealing simultaneously both of the ferroelectric layer and the impurities introduced into the conductor substrate to crystallize the ferroelectric layer and at the same time activate the impurities thereby to form a pair of impurity diffused layers.