METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact hole of a semiconductor device is provided to form the contact hole necessary for the semiconductor device without deteriorating an electrical characteristic of the semiconductor device by etching an insulation film in a small etching selection ratio condition. CONSTITUTION: A gate electrode(20) and a source/drain region(32) are formed on a semiconductor substrate(10). A metal silicide film(34) is formed only on the source/drain region of a logic circuit region. The first interlayer insulation film(40) is formed on a surface of the results. A self-align contact pad(42) is formed between two gate electrodes adjacent to a cell array region. The second interlayer insulation film(50) is formed on the results. A photoresist pattern is formed on the second interlayer insulation film. The first and the second interlayer insulation film and the silicon nitride film(26) are etched by a MERIE(Magnetically Enhanced Reactive Ion Etching) method using a mixture gas of CHF3, CO and O2 as an etching gas. Then, the first, the second and the third contact hole(H1,H2,H3) are formed.