| 摘要 |
PROBLEM TO BE SOLVED: To provide a dielectric film element can be prevented from lowering a dielectric property by deterioration caused by reacting an ingredient of the dielectric film with insulating film and generating crack or peeling even in the case of heat treatment at a high temperature for crystallizing ferroelectric substance sufficiently on an insulating substrate which is provided with wired electrodes and containing silicon oxide as a main ingredient or on a film which is formed on the substrate and containing silicon oxide as a main ingredient. SOLUTION: The dielectric film layer 3, the lead concentrations of which is lower than that of a layer 4 of lanthanum lead zirconate titanate film, and containing at least Sr, Bi and Ta or Nb, is formed between a glass substrate 1 and the layer 4 of the lanthanum lead zirconate titanate film. |
