发明名称 METHOD FOR MANUFACTURING TRIODE-STRUCTURE CARBON NANOTUBE FIELD EMITTER ARRAY
摘要 PURPOSE: A method for manufacturing a triode-structure carbon nanotube field emitter array is provided to overcome an alignment problem of multilayer without utilizing an additional aligner with proceeding a screen printing and an etching process by using a negative or a positive photosensitive paste, and also to reduce a number of mask layers to be used by utilizing a thin film layer as a mask layer. CONSTITUTION: In the method for manufacturing a triode-structure carbon nanotube field emitter array, a conductive thin film layer(13) is formed on a transparent substrate(11) formed thereon a transparent electrode(12), and a portion of the transparent electrode(12) is exposed. And then, an opaque thin film layer is formed on the portion of the exposed transparent electrode. Thereafter, an insulating layer(15) is formed on the conductive thin film layer(13) and the opaque thin film layer(16) is removed. Subsequently, a gate layer(17) is formed on the top of the insulating layer(16). In the next step, after the opaque thin film layer(16) is removed, a carbon nanotube tip(18) is formed on the tip of the exposed transparent electrode(12).
申请公布号 KR20020057791(A) 申请公布日期 2002.07.12
申请号 KR20010083353 申请日期 2001.12.22
申请人 SAMSUNG SDI CO., LTD. 发明人 JUNG, DEUK SEOK;LEE, HANG U;PARK, SANG HYEON
分类号 H01J1/30;(IPC1-7):H01J1/30 主分类号 H01J1/30
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