| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device such as a multilevel-flash memory or the like in which a processing time for setting write control information to a sense latch circuit can be shortened. SOLUTION: This device is a semiconductor device to which multilevel information can be written electrically, bit lines are connected to input/output terminals of right and left of a sense latch circuit, a data latch circuit is connected to each bit line, and the device is provided with a decoder decoding write data externally supplied and generating write control information. The write control information is latched by the sense latch circuit and the data latch circuit, Lathed control information is information indicating yes or no of applying write voltage corresponding to each of multilevel. First, write operation based on latch data of a sense latch circuit is controlled, after this, write control information of the sense latch circuit is transferred internally from the data latch circuit in order and write control is performed successively. As write data s decoded, a processing time of data latch processing performed by a logic synthesis circuit on the bit line can be reduced.</p> |
