发明名称 |
High voltage breakdown isolation semiconductor device and manufacturing process for making the device |
摘要 |
In a high breakdown voltage semiconductor device, a buried diffusion region is formed on a semiconductor substrate and an epitaxial layer is formed on the buried diffusion region and the substrate. The epitaxial layer includes a low breakdown voltage element region adjoined by a high breakdown voltage isolation region. A method for forming the high breakdown voltage isolation region complies with a Resurf condition by adjusting a thickness and an impurity concentration of the epitaxial layer. Thus, a high breakdown voltage semiconductor device and a manufacturing process therefor is provided, which includes a low breakdown voltage element region and a high breakdown voltage element region, and a high breakdown isolation region separates a high breakdown voltage region without impairing the characteristics of an element formed on the low breakdown voltage element region.
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申请公布号 |
US2002089028(A1) |
申请公布日期 |
2002.07.11 |
申请号 |
US20020097852 |
申请日期 |
2002.03.15 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NAGATANI TATSUHIKO;TERASHIMA TOMOHIDE |
分类号 |
H01L27/06;H01L21/74;H01L21/76;H01L21/761;H01L21/8234;H01L27/088;H01L27/092;H01L29/06;(IPC1-7):H01L23/58 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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