| 摘要 |
A transfer mask blank comprising a support substrate having struts, a silicon oxide layer formed on the support substrate, and a silicon membrane formed on the silicon oxide layer, characterized in that an average phosphorus concentration in the silicon membrane is between 5x10<18> atom/cm<3> and 1x10<20> atom/cm<3>, and a phosphorus concentration uniformity in the silicon membrane is up to 20%. The transfer mask blank can easily set a silicon membrane stress to a proper value, and can easily restrict warp and deform of a pattern.
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