Semiconductor device with metal silicide film on partial area of substrate surface and its manufacture method

摘要

First and second regions are defined in a principal surface of a semiconductor substrate. Two projected structures are disposed on the principal surface of the first region and spaced apart by a certain distance. The two projected structures run on a first active region in the first region and on an element isolation region around the first active region. A first silicide film is formed on the surface of a partial active region in the principal surface in the second region. A burying member covers the side walls of the two projected structures and buries a space between the two projected structures at least in the element isolation region. The burying member is not formed above the two projected structures. A metal silicide film is not formed on the surface of the first active region.