| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device together with its manufacturing method comprising a non-volatile memory transistor where a rewritable frequency characteristics is improved. SOLUTION: The method for manufacturing a semiconductor device comprising the non-volatile memory transistor is provided with a process where a silicon oxide layer 20 and a polysilicon layer 22a are formed on a silicon substrate 10, a process where a second insulating layer 24 is formed on a prescribed region of the polysilicon layer 22a, a process where a floating gate 22 is formed by patterning the polysilicon layer 22a, a process where at least a side end of the second insulating layer 24 is removed, a process where a silicon oxide layer 26 is formed which contacts at least a part of a circumferential part of the floating gate 22, a process where a control gate 28 comprising a prescribed pattern is formed on the silicon oxide layer 26, and a process where impurity diffusion layers 14 and 16 constituting a source region or a drain region are formed in the silicon substrate 10.
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