Low impedance VDMOS semiconductor component

摘要

A low impedance VDMOS semiconductor component having a planar gate structure is described. The VDMOS semiconductor component contains a semiconductor body of a first conductivity type having two main surfaces, including a first main surface and a second main surface disposed substantially opposite to one another. A highly doped first zone of the first conductivity type is disposed in an area of the first main surface. A second zone of a second conductivity type separates the first zone from the semiconductor body. The first zone and the second zone have a trench with a bottom formed therein reaching down to the semiconductor body. An insulating material fills the trench at least beyond an edge of the second zone facing the semiconductor body. A region of the second conductivity type surrounds an area of the bottom of the trench.