| 发明名称 |
Vacancy, dominsated, defect-free silicon |
| 摘要 |
The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region in which vacancies are the predominant intrinsic point defect and which is substantially free of agglomerated vacancy intrinsic point defects, wherein the first axially symmetric region has a width which is at least about 50% of the length of the radius of the ingot, and a process for the preparation thereof.
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| 申请公布号 |
US2002078880(A1) |
申请公布日期 |
2002.06.27 |
| 申请号 |
US20010000545 |
申请日期 |
2001.10.24 |
| 申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
FALSTER ROBERT J.;HOLZER JOSEPH C.;MARKGRAF STEVE A.;MUTTI PAOLO;MCQUAID SEAMUS A.;JOHNSON BAYARD K. |
| 分类号 |
C30B15/00;C30B15/20;C30B15/22;C30B29/06;C30B33/00;H01L21/322;H01L29/12;(IPC1-7):C30B33/06 |
主分类号 |
C30B15/00 |
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