| 摘要 |
PURPOSE: An isolation layer formation method of semiconductor devices is provided to restrain a generation of moat by forming a sidewall spacer at both sidewalls of a mask pattern. CONSTITUTION: A mask pattern is formed on a semiconductor substrate. A sidewall spacer(55) is formed at both sidewalls of the mask pattern. A trench(56) is formed by etching the semiconductor substrate using the mask pattern and the sidewall spacer(55) as a mask. An isolation layer is formed by filling an insulating layer into the trench(56). Then, the mask pattern is removed. At the time, a nitride layer is used as the mask pattern, and an oxide layer is used as the sidewall spacer(55).
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