发明名称 |
Process for producing high quality PZT films for ferroelectric memory integrated circuits |
摘要 |
<p>A method for fabrication of ferroelectric capacitor elements of an integrated circuit includes steps of deposition of an electrically conductive bottom electrode layer, preferably made of a noble metal. The bottom electrode is covered with a layer of ferroelectric dielectric material. The ferroelectric dielectric is annealed with a first anneal prior to depositing a second electrode layer comprising a noble metal oxide. Deposition of the electrically conductive top electrode layer is followed by annealing the layer of ferroelectric dielectric material and the top electrode layer with a second anneal. The first and the second anneal are performed by rapid thermal annealing. <IMAGE></p> |
申请公布号 |
EP1217658(A2) |
申请公布日期 |
2002.06.26 |
申请号 |
EP20010119817 |
申请日期 |
2001.08.16 |
申请人 |
FUJITSU LIMITED |
发明人 |
FOX, GLEN;CHU, FAN;EASTEP, BRIAN;TAKAMATSU, TOMOHIRO;HORII, YOSHIMASA;NAKAMURA, KO |
分类号 |
H01L27/105;H01L21/02;H01L21/314;H01L21/316;H01L21/8246;(IPC1-7):H01L21/824 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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