| 发明名称 |
TITANIUM SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering target in which the generation of dust is effectively prevented. SOLUTION: In the titanium sputtering target, the half-width of the peak of crystal plane (101) determined by the X-ray diffraction of at least a part of the noneroded area of a surface to be sputtered is regulated to 0.25-0.5.
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| 申请公布号 |
JP2002180243(A) |
申请公布日期 |
2002.06.26 |
| 申请号 |
JP20000375914 |
申请日期 |
2000.12.11 |
| 申请人 |
TOSHIBA CORP;TOSHIBA ELECTRONIC ENGINEERING CORP |
发明人 |
YABE YOICHIRO;ISHIGAMI TAKASHI;WATANABE KOICHI;WATANABE TAKASHI;KOSAKA YASUO |
| 分类号 |
C23C14/34;C22C14/00;C23C14/00;H01L21/203;H01L21/28;H01L21/285;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/34 |
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