| 摘要 |
PROBLEM TO BE SOLVED: To provide a means of forming an ITO transparent conductive film with extremely small volume-resistivity on a base body using indium chloride as a raw material. SOLUTION: This coating liquid for forming the ITO transparent conductive film by a dip coating method is characterized by that a surfactant is added to the coating liquid with indium chloride, stannous chloride or stannic chloride dissolved in one of water, alcohol, or a water-alcohol mixture. It is favorable that the surfactant is a nonionic surfactant, and particularly favorable that, it is polyoxyethylene sorbitan fatty acid ester based. An ITO film with a thickness of <=15 nm is formed on a substrate in one dip coating by using the coating liquid and baking it after applying it on the substrate by the dip coating method. By repeating this more than once and forming a multi-layer film, the ITO transparent conductive film with extremely small volume resistivity of 10-4Ω.cm order can be formed.
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