METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A contact hole formation method of semiconductor devices is provided to prevent a short between word lines and a plug by compensating loss of a nitride layer due to an SAC(Self-Aligned Contact) processing. CONSTITUTION: After sequentially depositing and patterning a metal film and a nitride layer(23) on a silicon substrate(21), a plurality of word lines(22) are formed. An insulating spacer(24) is formed at both sidewalls of the word lines(22). After forming an ILD(Inter Layer Dielectric)(25) on the resultant structure, a contact hole(27) is formed to expose the surface of the substrate by selectively etching the ILD. After removing the insulating spacer(24) in the contact hole, a nitride spacer is formed at both sidewalls of the contact hole(27).