发明名称 |
Semiconductor varactor with reduced parasitic resistance |
摘要 |
A semiconductor varactor with reduced parasitic resistance. A contact isolation structure (32) is formed in a well region (20). The gate contact structures (70) are formed above the contact isolation structure (32) reducing the parasitic resistance. In addition, contact structures are formed on the gate layer (50) over the well regions (20) is a further embodiment to reduce the parasitic resistance.
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申请公布号 |
US2002074589(A1) |
申请公布日期 |
2002.06.20 |
申请号 |
US20010994421 |
申请日期 |
2001.11.27 |
申请人 |
BENAISSA KAMEL;SHEN CHI-CHEONG |
发明人 |
BENAISSA KAMEL;SHEN CHI-CHEONG |
分类号 |
H01L27/08;H01L29/94;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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