| 发明名称 |
Chemical-mechanical planarization of polymer films |
| 摘要 |
The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles that comprise ceria, zirconia, silica, alumina, or a combination thereof, (b) a metal ion that is a Lewis Acid, (c) a ligand that is an aromatic carboxylic acid, an aromatic sulfonic acid, an aromatic acid amide, an amino acid, or a hydroxy-substituted N-heterocycle, and (d) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 4. |
| 申请公布号 |
US9434859(B2) |
申请公布日期 |
2016.09.06 |
| 申请号 |
US201314035037 |
申请日期 |
2013.09.24 |
| 申请人 |
Cabot Microelectronics Corporation |
发明人 |
Pallikkara Kuttiatoor Sudeep;Jia Renhe;Dysard Jeffrey |
| 分类号 |
C09G1/02;B24B1/00 |
主分类号 |
C09G1/02 |
| 代理机构 |
|
代理人 |
Omholt Thomas;Homilla Arlene;Szelag Ashlee B. |
| 主权项 |
1. A chemical-mechanical polishing composition comprising:
(a) abrasive particles that comprise ceria, (b) a metal ion that is a Lewis Acid, (c) a ligand that is an aromatic carboxylic acid, an aromatic sulfonic acid, an aromatic acid amide, or a hydroxy-substituted N heterocycle, and (d) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 2 to about 3 and wherein the molar concentration ratio of the metal ion to the ligand is about 1:about 2. |
| 地址 |
Aurora IL US |
