| 摘要 |
PURPOSE: A static random access memory(SRAM) device is provided to simplify a fabricating process, by using the first polysilicon layer, the second polysilicon layer, the first metal layer, the second metal layer instead of 3 polysilicon layers and 2 metal layers. CONSTITUTION: An SRAM cell is composed of two access transistors, 2 drive transistors and 2 high impedance resistors. A power supply line supplies power to the high impedance resistor. A word line controls the gate of the access transistor. A ground line is connected to the source of the drive transistor. A bit line and a bit line bar are connected to the drain of the access transistor, and data is inputted/outputted through the bit line and the bit line bar. The high impedance resistor is of a plug type using an undoped polysilicon layer.
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