| 摘要 |
PURPOSE: A method for forming a ferroelectric capacitor of a semiconductor device is provided to improve the reliability of the device and the yield by reducing a thermal budget of a BLT thin film as a dielectric. CONSTITUTION: An element membrane separation(11), a word-line(12), and a bit-line(14) are formed on a silicon substrate(10). Interlayer dielectrics(13,15) are selectively etched to form a bottom electrode contact hole. A poly silicon plug(16) and a silicide /metal barrier layer(17) are formed within the contact hole. A bottom electrode(18) is formed. A BLT film(19) is coated on the upper part of the entire structure on which the bottom electrode is formed. After a baking process is performed, an oxygen plasma treatment is performed. Sequentially, a rapid thermal annealing process and a heat treatment using an electric furnace are performed. The oxygen plasma treatment is performed by using one of O2, N2O, H2O2, and O3. In the oxygen plasma treatment, a plasma power is in a range of 25 to 500W, a working pressure is in a range of 0.1mTorr to 10Torr, and a wafer temperature is in a range of 200 to 500 degrees.
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