发明名称 Semiconductor device and manufacturing method thereof
摘要 A semiconductor device preventing contact between a capacitor insulator and a plug material even when an upper surface of the plug is exposed by misregistration in lithography and manufacturing method thereof are obtained. The semiconductor device includes an interlayer insulating film, a conducting plug, a capacitor lower electrode and a capacitor dielectric, and an end portion of the upper surface of the conducting plug has a portion overlapping a vicinity of an outer periphery of the upper surface of the capacitor lower electrode when viewed two-dimensionally. In the vicinity of the end portion of the upper surface of the conducting plug, a chemically inactive member is formed.
申请公布号 US6407419(B1) 申请公布日期 2002.06.18
申请号 US19990362669 申请日期 1999.07.29
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 OKUDAIRA TOMONORI
分类号 H01L27/108;H01L21/02;H01L21/768;H01L21/8242;H01L21/8246;(IPC1-7):H01L27/108;H01L29/76;H01L29/94 主分类号 H01L27/108
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