| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating a wiring structure, by which a fine wiring structure is formed even if copper is used as wiring material, the number of fabrication steps is reduced and cost reduction is possible. SOLUTION: The method for fabricating a wiring structure, which comprises steps forming a secondary interlayer insulation film 204 (an insulation film) containing a material having electron beam photoactivity on a substrate formed a W plug 203 (an lower layer wiring) on a semiconductor device 20, exposing the secondary interlayer insulation film 204 by irradiating electron beam to the secondary interlayer insulation film 204, and forming a wiring trench, via hole and/or contact hole by removing unexposed portion by developing the secondary interlayer insulation film.
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