发明名称 Light-emitting device and production thereof
摘要 A PWB (printed wiring board) 101 termed a "chip LED" is used instead of a lead frame. On the substrate is etched a lead 203 buried in the dielectric layer portion. Solder bumps 204 are formed on the PWB. SnPb, In, Au, Ag, or other materials may be used as solder. The gallium nitride semiconductor light-emitting element 102 is arranged this substrate-which includes the electrical wiring-and is connected with the leads thereof. Semiconductor light-emitting element 102 is arranged over bumps 204 and lead connections are made using the bumps, which are masses of metal situated in the electrode portions. Since the fluorescent material is sensitive to temperature, the production process is carried out at low temperature. The temperature is about 80° C. to 150° C. The fluorescent material is admixed into this glass sol-gel solution, which is then applied and heated to produce a glass body. The fluorescent material is a combination of two materials, a blue-excited green fluorescent material and a blue-excited red fluorescent material. The semiconductor element chip is designed for flip-chip bonding. In the process of applying the glass over the surface of the semiconductor chip, flip chip bonding provided better technical affinity, since this connection process does not require the presence of wires. SrS:Eu2+ emits red light, and (Sr, Ba, Ca)S:Eu2+ emits green light. A specific example of a red fluorescent material is SrGd2S4:Eu2.
申请公布号 US2002070449(A1) 申请公布日期 2002.06.13
申请号 US20010879548 申请日期 2001.06.11
申请人 LUMILEDS LIGHTING, U.S., LLS 发明人 YAGI TAKAAKI;TAMURA TAKESHI;ARAKANE FUSANORI
分类号 C09K11/08;C09K11/56;C09K11/84;H01L33/32;H01L33/50;H01L33/54;H01L33/56;H01L33/62;(IPC1-7):H01L23/48;H01L31/12;H01L27/15;H01L29/40 主分类号 C09K11/08
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