| 摘要 |
PURPOSE: A method for fabricating a static random access memory(SRAM) is provided to reduce a leakage current in a cell and a standby current, by preventing a loss of a semiconductor substrate and a field oxide layer in a butting contact region while using an oxide layer spacer. CONSTITUTION: Polysilicon and a hard mask layer are sequentially formed on a semiconductor substrate(30). The hard mask layer and the polysilicon are selectively etched to define a gate electrode(33a) of a transistor while a predetermined thickness of the polysilicon is left. The hard mask layer included in a subsequent butting contact region is eliminated. The polysilicon is blanket-etched to open the butting contact region.
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