发明名称 |
Process for fabricating films of uniform properties on semiconductor devices |
摘要 |
A process for forming a thin layer exhibiting a substantially uniform property on an active surface of a semiconductor substrate. The process includes varying the temperature within a reaction chamber while a layer of a material is formed upon the semiconductor substrate. Varying the temperature within the reaction chamber facilitates temperature uniformity across the semiconductor wafer. As a result, a layer forming reaction occurs at a substantially consistent rate over the entire active surface of the semiconductor substrate. The process may also include oscillating the temperature within the reaction chamber while a layer of a material is being formed upon a semiconductor substrate.
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申请公布号 |
US2002066534(A1) |
申请公布日期 |
2002.06.06 |
申请号 |
US20020047051 |
申请日期 |
2002.01.14 |
申请人 |
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发明人 |
MERCALDI GARRY ANTHONY;POWELL DON CARL |
分类号 |
C23C16/46;H01L21/316;(IPC1-7):C23F1/02 |
主分类号 |
C23C16/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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