发明名称 Control and timing structure for a memory
摘要 A timing and control structure for a memory, including the timing and control structure includes a first circuit that can recognize, on the basis of control signals supplied to the memory from the exterior, whether a random-access reading is to be executed, the control signals including a first control signal indicative of the presence of an address supplied to the memory from the exterior, and a second control signal that, upon switching edges of a first type, supplies to the control and timing structure a time base for the execution of the random-access readings and, upon switching edges of a second type, supplies a time base for the execution of the sequential readings, a second circuit controlled by the first circuit and upon a random-access reading, generates a first synchronism signal in response to a transition of the first type in the second control signal, a third circuit sensitive to transitions of the second type in the second control signal and which can generate a second synchronism signal upon transitions of the second type, and a fourth circuit controlled by the first circuit to supply a stimulus signal to a timing circuit of the memory, the stimulus signal corresponding to the first synchronism signal for a random-access reading, or to the second synchronism signal for a sequential reading.
申请公布号 US2002067655(A1) 申请公布日期 2002.06.06
申请号 US20010972753 申请日期 2001.10.05
申请人 STMICROELECTRONICS S.R.L. 发明人 PASCUCCI LUIGI
分类号 G11C7/10;G11C16/26;G11C16/32;(IPC1-7):G11C8/00 主分类号 G11C7/10
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